| Presentation | 2017-12-22 Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using copper (Cu) for crystallization of GeSn (Sn=7%) thin film. It was found that quality of Cu-MIC poly-GeSn (Sn=7%) is superior to those of solid-phase crystallization (SPC) poly-GeSn (Sn=7%) and pure poly-Ge thin film. We fabricated double-gate poly-GeSn (Sn=7%) thin-film transistors (TFTs) to reduce off-current and it was found to be mobility of 25 cm2/Vs and on/off ration of 4000. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin film transistor / GeSn / Ge / double gate / metal induced crystallization |
| Paper # | EID2017-24,SDM2017-85 |
| Date of Issue | 2017-12-15 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate |
| Sub Title (in English) | |
| Keyword(1) | thin film transistor |
| Keyword(2) | GeSn |
| Keyword(3) | Ge |
| Keyword(4) | double gate |
| Keyword(5) | metal induced crystallization |
| 1st Author's Name | Naoki Nishiguchi |
| 1st Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 2nd Author's Name | Hiroki Utsumi |
| 2nd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 3rd Author's Name | Akito Hara |
| 3rd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| Date | 2017-12-22 |
| Paper # | EID2017-24,SDM2017-85 |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.67-70(EID), pp.67-70(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-12-15 (EID, SDM) |