Presentation 2017-12-22
Cross point synapse using amorphous oxide semiconductor for neurocomputing devices
Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura,
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Abstract(in English)
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Keyword(in English)
Paper # EID2017-20,SDM2017-81
Date of Issue 2017-12-15 (EID, SDM)

Conference Information
Committee SDM / EID
Conference Date 2017/12/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kyoto University
Topics (in Japanese) (See Japanese page)
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology
Chair Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.)
Vice Chair Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cross point synapse using amorphous oxide semiconductor for neurocomputing devices
Sub Title (in English)
Keyword(1)
Keyword(2)
Keyword(3)
Keyword(4)
Keyword(5)
1st Author's Name Ryo Tanaka
1st Author's Affiliation Ryukoku University(Ryukoku Univ.)
2nd Author's Name Sumio Sugisaki
2nd Author's Affiliation Ryukoku University(Ryukoku Univ.)
3rd Author's Name Mutsumi Kimura
3rd Author's Affiliation Ryukoku University(Ryukoku Univ.)
Date 2017-12-22
Paper # EID2017-20,SDM2017-81
Volume (vol) vol.117
Number (no) EID-372,SDM-373
Page pp.pp.45-49(EID), pp.45-49(SDM),
#Pages 5
Date of Issue 2017-12-15 (EID, SDM)