| Presentation | 2017-12-14 A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting Minori Yoshida, Kousuke Miyaji, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore power supply from low output energy harvesting sources even when a battery runs out of power. Although a boost-up charge pump circuit is normally used for the cold-start function, high channel resistance at power transistors in the charge pump limits the performance because of low gate-source-voltage. In this work, a start-up charge pump circuit for extremely low input voltage that can start-up from 190mV (VIN) is proposed and demonstrated. The proposed circuit uses inverter level shifter to generate 2VIN voltage swing for the gate of both main NMOS and PMOS power transistors to reduce the channel resistance. The proposed circuit is fully implemented in a standard 0.18um CMOS process and the measurement result shows that minimum input voltage of 190mV is achieved. Moreover, the proposed circuit achieves maximum efficiency of 59.2% when the input voltage is 390mV and the output current is 320nA. Compared with the conventional forward-body-bias circuit, output power increases by 181% at 300mV input voltage. The proposed circuit is suitable for a start-up circuit in ultralow power energy harvesting power management applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Start-up charge pump / CMOS gate boosting / Energy harvesting / Voltage doubler |
| Paper # | CAS2017-91,ICD2017-79,CPSY2017-88 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |
| Conference Information | |
| Committee | ICD / CPSY / CAS |
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| Conference Date | 2017/12/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Art Hotel Ishigakijima |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Mitsuru Hiraki(Renesas) |
| Vice Chair | Makoto Nagata(Kobe Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Takashi Miyoshi(Fujitsu) / Hideaki Okazaki(Shonan Inst. of Tech.) |
| Secretary | Makoto Nagata(Univ. of Tokyo) / Hidetsugu Irie(Panasonic) / Takashi Miyoshi(Utsunomiya Univ.) / Hideaki Okazaki(Hokkaido Univ.) |
| Assistant | Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Yasuaki Ito(Hiroshima Univ.) / Tomoaki Tsumura(Nagoya Inst. of Tech.) / Yohei Nakamura(Hitachi) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems / Technical Committee on Circuits and Systems |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting |
| Sub Title (in English) | |
| Keyword(1) | Start-up charge pump |
| Keyword(2) | CMOS gate boosting |
| Keyword(3) | Energy harvesting |
| Keyword(4) | Voltage doubler |
| 1st Author's Name | Minori Yoshida |
| 1st Author's Affiliation | Shinshu University(Shinshu Univ.) |
| 2nd Author's Name | Kousuke Miyaji |
| 2nd Author's Affiliation | Shinshu University(Shinshu Univ.) |
| Date | 2017-12-14 |
| Paper # | CAS2017-91,ICD2017-79,CPSY2017-88 |
| Volume (vol) | vol.117 |
| Number (no) | CAS-343,ICD-344,CPSY-345 |
| Page | pp.pp.127-127(CAS), pp.127-127(ICD), pp.127-127(CPSY), |
| #Pages | 1 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |