| Presentation | 2017-12-22 Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda, Kenta Umeda, Mutsunori Uenuma, Mutsumi Kimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. However, rare metals are often used for oxide semiconductors which are expected as thermoelectric conversion elements. Therefore, we are researching thermoelectric conversion elements using GTO thin film which is a rare metal free oxide semiconductor. In this study, the dependence on the annealing, oxygen flow rate ratio and film forming pressure of the GTO thermoelectric conversion element was evaluated. When the oxygen flow rate ratio Ar / O2 = 20/4 sccm, the Seebeck coefficient was -284 μV / K, the conductivity was 3.9 S / cm, and the PF was 0.031 mW / m K2. We believe that performance will be improved by optimizing the film forming conditions in the future. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thermoelectric effect / Seebeck effect / Oxide semiconductor |
| Paper # | EID2017-17,SDM2017-78 |
| Date of Issue | 2017-12-15 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
|---|---|
| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Seebeck effect measurement of rare metal free oxide semiconductor |
| Sub Title (in English) | |
| Keyword(1) | Thermoelectric effect |
| Keyword(2) | Seebeck effect |
| Keyword(3) | Oxide semiconductor |
| 1st Author's Name | Ryuki Nomura |
| 1st Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 2nd Author's Name | Tatsuya Aramaki |
| 2nd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 3rd Author's Name | Tokiyoshi Matsuda |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 4th Author's Name | Kenta Umeda |
| 4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 5th Author's Name | Mutsunori Uenuma |
| 5th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 6th Author's Name | Mutsumi Kimura |
| 6th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| Date | 2017-12-22 |
| Paper # | EID2017-17,SDM2017-78 |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.29-34(EID), pp.29-34(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-12-15 (EID, SDM) |