| Presentation | 2017-12-22 Flexible Device Applications Using GaSnO Thin Films Ryo Takagi, Kenta Umeda, Tokiyoshi Matsuda, Mutsunori Uenuma, Mutsumi Kimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO) thin films of rare metal-free oxide semiconductors to be applied to flexible devices. GTO TFTs was fabricated using RF magnetron sputtering at room temperature, and we succeeded in operating as TFTs. The thermoelectric conversion element was also fabricated using RF magnetron sputtering at room temperature on a plastic substrate to evaluate the thermoelectric properties of the GTO film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RF Magnetron Sputtering / Amorphous Ga-Sn-O(a-GTO) Thin Film / Oxide Semiconductor / Flexible / Room Temperature |
| Paper # | EID2017-16,SDM2017-77 |
| Date of Issue | 2017-12-15 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
|---|---|
| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Flexible Device Applications Using GaSnO Thin Films |
| Sub Title (in English) | |
| Keyword(1) | RF Magnetron Sputtering |
| Keyword(2) | Amorphous Ga-Sn-O(a-GTO) Thin Film |
| Keyword(3) | Oxide Semiconductor |
| Keyword(4) | Flexible |
| Keyword(5) | Room Temperature |
| 1st Author's Name | Ryo Takagi |
| 1st Author's Affiliation | Ryukoku Universituy(Ryukoku Univ.) |
| 2nd Author's Name | Kenta Umeda |
| 2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 3rd Author's Name | Tokiyoshi Matsuda |
| 3rd Author's Affiliation | Innovative Materials and Process Research Center Ryukoku University(Ryukoku Univ.) |
| 4th Author's Name | Mutsunori Uenuma |
| 4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 5th Author's Name | Mutsumi Kimura |
| 5th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| Date | 2017-12-22 |
| Paper # | EID2017-16,SDM2017-77 |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.23-28(EID), pp.23-28(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-12-15 (EID, SDM) |