| Presentation | 2017-12-22 Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p+-type SiC substrates that are collectors of n-channel IGBTs. In p-type 6H-SiC with an Al concentration (NAl) of 1.6×1019 cm-3, it was reported that a decrement in its Hall coefficient appeared in a hopping conduction region, not a band conduction region, and that an inversion of its Hall coefficient occurred at a lower temperature. On the other hand, in p-type 4H-SiC with NAl of higher than 2×1019 cm-3, it is found that the decrement and inversion of their Hall coefficients occur in the band conduction region. Moreover, the temperature at which the inversion of the Hall coefficient occurs becomes higher as NAl is increased. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Heavily Al-doped 4H-SiC / Resistivity / Hall-effect measurement / Hall coefficient / Conduction mechanism |
| Paper # | EID2017-13,SDM2017-74 |
| Date of Issue | 2017-12-15 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC |
| Sub Title (in English) | Relationship between Inversion of Hall Coefficient and Conduction Mechanism |
| Keyword(1) | Heavily Al-doped 4H-SiC |
| Keyword(2) | Resistivity |
| Keyword(3) | Hall-effect measurement |
| Keyword(4) | Hall coefficient |
| Keyword(5) | Conduction mechanism |
| 1st Author's Name | Rinya Nishihata |
| 1st Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 2nd Author's Name | Akinobu Takeshita |
| 2nd Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 3rd Author's Name | Tatsuya Imamura |
| 3rd Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 4th Author's Name | Kota Takano |
| 4th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 5th Author's Name | Kazuya Okuda |
| 5th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 6th Author's Name | Shinji Ozawa |
| 6th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 7th Author's Name | Atsuki Hidaka |
| 7th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 8th Author's Name | Hideharu Matsuura |
| 8th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 9th Author's Name | Shiyang Ji |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 10th Author's Name | Kazuma Eto |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 11th Author's Name | Kazutoshi Kojima |
| 11th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 12th Author's Name | Tomohisa Kato |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 13th Author's Name | Sadafumi Yoshida |
| 13th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 14th Author's Name | Hajime Okumura |
| 14th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2017-12-22 |
| Paper # | EID2017-13,SDM2017-74 |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.9-12(EID), pp.9-12(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-12-15 (EID, SDM) |