Presentation 2017-12-22
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura, Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p+-type SiC substrates that are collectors of n-channel IGBTs. However, it is not clear that the relationships between its conduction mechanisms and Al concentration or measurement temperature in heavily Al-doped 4H-SiC. Therefore, we measured the temperature-dependent resistivity in heavily-doped 4H-SiC with several Al concentrations by a van der Pauw method, and then elucidated the relationships.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiC IGBT / p-type 4H-SiC / Heavily Al-doped 4H-SiC / Temperature-dependent resistivity / Conduction mechanism
Paper # EID2017-12,SDM2017-73
Date of Issue 2017-12-15 (EID, SDM)

Conference Information
Committee SDM / EID
Conference Date 2017/12/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kyoto University
Topics (in Japanese) (See Japanese page)
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology
Chair Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.)
Vice Chair Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
Sub Title (in English) Dependencies of resistivity on Al concentration and temperature
Keyword(1) SiC IGBT
Keyword(2) p-type 4H-SiC
Keyword(3) Heavily Al-doped 4H-SiC
Keyword(4) Temperature-dependent resistivity
Keyword(5) Conduction mechanism
1st Author's Name Shinji Ozawa
1st Author's Affiliation Osaka Electro-Communication University(OECU)
2nd Author's Name Akinobu Takeshita
2nd Author's Affiliation Osaka Electro-Communication University(OECU)
3rd Author's Name TAtsuya imamura
3rd Author's Affiliation Osaka Electro-Communication University(OECU)
4th Author's Name Kota Takano
4th Author's Affiliation Osaka Electro-Communication University(OECU)
5th Author's Name Kazuya Okuda
5th Author's Affiliation Osaka Electro-Communication University(OECU)
6th Author's Name Atsuki Hidaka
6th Author's Affiliation Osaka Electro-Communication University(OECU)
7th Author's Name Hideharu Matsuura
7th Author's Affiliation Osaka Electro-Communication University(OECU)
8th Author's Name Shiyang Ji
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
9th Author's Name Kazuma Eto
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
10th Author's Name Kazuoshi Kojima
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
11th Author's Name Tomohisa Kato
11th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
12th Author's Name Sadafumi Yoshida
12th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
13th Author's Name Hajime Okumura
13th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
Date 2017-12-22
Paper # EID2017-12,SDM2017-73
Volume (vol) vol.117
Number (no) EID-372,SDM-373
Page pp.pp.5-8(EID), pp.5-8(SDM),
#Pages 4
Date of Issue 2017-12-15 (EID, SDM)