| Presentation | 2017-12-14 Accelerated Transient Analysis of Power MOSFETs by the Matrix Exponential Method Tatsuya Kamei, Shigetaka Kumashiro, Kazutoshi Kobayashi, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In designing and developing power devices, reduction of simulation time is required. In this study, an accurate metric for the time step control in the device transient simulation is proposed. This metric contains an exponential term of the dominant time constant of the whole device structure obtained by the matrix exponential method. Total CPU-time of the transient simulation of a silicon power DMOSFET by using the proposed method decreases down to 30% of that by the conventional metric with assuring the current accuracy of the dominant transient response. By using the approximate value obtained by the formal solution as the initial value of the Newton method, it is possible to further reduce the total CPU-time by 21%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Power device / Transient analysis / Time step control / Local truncation error / Matrix Exponential method / Arnoldi method |
| Paper # | CAS2017-87,ICD2017-75,CPSY2017-84 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |
| Conference Information | |
| Committee | ICD / CPSY / CAS |
|---|---|
| Conference Date | 2017/12/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Art Hotel Ishigakijima |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Mitsuru Hiraki(Renesas) |
| Vice Chair | Makoto Nagata(Kobe Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Takashi Miyoshi(Fujitsu) / Hideaki Okazaki(Shonan Inst. of Tech.) |
| Secretary | Makoto Nagata(Univ. of Tokyo) / Hidetsugu Irie(Panasonic) / Takashi Miyoshi(Utsunomiya Univ.) / Hideaki Okazaki(Hokkaido Univ.) |
| Assistant | Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Yasuaki Ito(Hiroshima Univ.) / Tomoaki Tsumura(Nagoya Inst. of Tech.) / Yohei Nakamura(Hitachi) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems / Technical Committee on Circuits and Systems |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Accelerated Transient Analysis of Power MOSFETs by the Matrix Exponential Method |
| Sub Title (in English) | |
| Keyword(1) | Power device |
| Keyword(2) | Transient analysis |
| Keyword(3) | Time step control |
| Keyword(4) | Local truncation error |
| Keyword(5) | Matrix Exponential method |
| Keyword(6) | Arnoldi method |
| 1st Author's Name | Tatsuya Kamei |
| 1st Author's Affiliation | Kyoto Institute of Technology(KIT) |
| 2nd Author's Name | Shigetaka Kumashiro |
| 2nd Author's Affiliation | Kyoto Institute of Technology(KIT) |
| 3rd Author's Name | Kazutoshi Kobayashi |
| 3rd Author's Affiliation | Kyoto Institute of Technology(KIT) |
| Date | 2017-12-14 |
| Paper # | CAS2017-87,ICD2017-75,CPSY2017-84 |
| Volume (vol) | vol.117 |
| Number (no) | CAS-343,ICD-344,CPSY-345 |
| Page | pp.pp.107-112(CAS), pp.107-112(ICD), pp.107-112(CPSY), |
| #Pages | 6 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |