| Presentation | 2017-12-22 Electric properties in Al-N codoped p-type 4H-SiC epilayers Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduce the resistance in thick p+-type SiC substrate that is a collector of n-channel IGBTs and to obtain high quality crystal. It is reported that codoping of Al and N in heavily Al-doped p-type 4H-SiC can form high quality epilayers. In this study, electrical properties of Al-N codoped p-type 4H-SiC epilayers are investigated. It is found that the codoping of N makes nearest-neighbor hopping conduction dominant at temperatures higher in the singly-doped samples. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-type 4H-SiC / Heavily Al-doped 4H-SiC / Heavily Al-N codoped 4H-SiC / Conduction mechanism / Temperature-dependent resistivity |
| Paper # | EID2017-14,SDM2017-75 |
| Date of Issue | 2017-12-15 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electric properties in Al-N codoped p-type 4H-SiC epilayers |
| Sub Title (in English) | Comparison between temperature dependent resistivity in Al-doped and codoped samples |
| Keyword(1) | p-type 4H-SiC |
| Keyword(2) | Heavily Al-doped 4H-SiC |
| Keyword(3) | Heavily Al-N codoped 4H-SiC |
| Keyword(4) | Conduction mechanism |
| Keyword(5) | Temperature-dependent resistivity |
| 1st Author's Name | Atsuki Hidaka |
| 1st Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 2nd Author's Name | Akinobu Takeshita |
| 2nd Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 3rd Author's Name | Tatsuya Imamura |
| 3rd Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 4th Author's Name | kota Takano |
| 4th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 5th Author's Name | Kazuya Okuda |
| 5th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 6th Author's Name | Shinji Ozawa |
| 6th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 7th Author's Name | Hideharu Matsuura |
| 7th Author's Affiliation | Osaka Electro-Communication University(OECU) |
| 8th Author's Name | Shiyang Ji |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 9th Author's Name | Kazuma Eto |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 10th Author's Name | Kazutoshi Kojima |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 11th Author's Name | Tomohisa Kato |
| 11th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 12th Author's Name | Sadafumi Yoshida |
| 12th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 13th Author's Name | Hajime Okumura |
| 13th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2017-12-22 |
| Paper # | EID2017-14,SDM2017-75 |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.13-16(EID), pp.13-16(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-12-15 (EID, SDM) |