| Presentation | 2017-12-01 Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-deposition annealing (PDA) has also been performed. However, the effects of the layer thickness and the PDA temperature on chemical characteristics of Al2O3 layers have not been clarified enough. In this study, the chemical characteristics of Al2O3 layers were studied by XPS and ESR. As the results, it was found that impurities in Al2O3 decrease remarkably by PDA at 600℃, and the amount of unpaired electrons in Al2O3 increase with the crystallization by PDA above 700℃. In order to reduce both the threshold voltage shift and the leakage current of GaN-based devises, two-layer structures that consist of an Al2O3 layer with PDA above 700℃ and a current blocking layer seem to be effective. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / ALD / Al2O3 / XPS / ESR |
| Paper # | ED2017-64,CPM2017-107,LQE2017-77 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | ALD |
| Keyword(4) | Al2O3 |
| Keyword(5) | XPS |
| Keyword(6) | ESR |
| 1st Author's Name | Toshiharu Kubo |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 2nd Author's Name | Makoto Miyoshi |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| Date | 2017-12-01 |
| Paper # | ED2017-64,CPM2017-107,LQE2017-77 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.73-76(ED), pp.73-76(CPM), pp.73-76(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |