| Presentation | 2017-11-30 Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi, Yuya Kanitani, Shigetaka Tomiya, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional fluctuation in InGaN alloy materials used as active layers in LEDs and laser diodes. However, the fitting function commonly used in this analysis is derived on the basis of some bold approximation, and the analysis can be applied in only limited conditions (e.g. high temperature and small carrier density). In this work, we have established a new theoretical model which can be applied in wide ranges of temperature and carrier density. A measured S-shape behavior in an InGaN quantum-well structure has been analyzed by the theoretical model, and it is shown that the S-shaped behavior can be well fitted by our model in a wide temperature range, compared with the conventional model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN-QWｓ / compositional fluctuation / S-Shape |
| Paper # | ED2017-51,CPM2017-94,LQE2017-64 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells |
| Sub Title (in English) | |
| Keyword(1) | InGaN-QWｓ |
| Keyword(2) | compositional fluctuation |
| Keyword(3) | S-Shape |
| 1st Author's Name | Yuma Ikeda |
| 1st Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tehc.) |
| 2nd Author's Name | Shigeta Sakai |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tehc.) |
| 3rd Author's Name | Itsuki Oshima |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tehc.) |
| 4th Author's Name | Atsushi A. Yamaguchi |
| 4th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tehc.) |
| 5th Author's Name | Yuya Kanitani |
| 5th Author's Affiliation | Sony Corporation(Sony) |
| 6th Author's Name | Shigetaka Tomiya |
| 6th Author's Affiliation | Sony Corporation(Sony) |
| Date | 2017-11-30 |
| Paper # | ED2017-51,CPM2017-94,LQE2017-64 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.11-14(ED), pp.11-14(CPM), pp.11-14(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |