| Presentation | 2017-12-01 Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It has been an important issue to increase the light output power of Eu-doped GaN (GaN: Eu) red LEDs for their practical use. In this presentation, we demonstrate the realization of red vertical microcavity LEDs composed of conductive distributed Bragg reflector (DBR) with Eu-doped GaN as an active layer and observed a 5-fold increase in light output power of GaN: Eu red LED. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Eu-doped GaN / distributed Bragg reflectors / OMVPE / resonant cavity / LEDs |
| Paper # | ED2017-58,CPM2017-101,LQE2017-71 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer |
| Sub Title (in English) | |
| Keyword(1) | Eu-doped GaN |
| Keyword(2) | distributed Bragg reflectors |
| Keyword(3) | OMVPE |
| Keyword(4) | resonant cavity |
| Keyword(5) | LEDs |
| 1st Author's Name | Jun Tatebayashi |
| 1st Author's Affiliation | Osaka University(Osaka Univ.) |
| 2nd Author's Name | Tomohiro Inaba |
| 2nd Author's Affiliation | Osaka University(Osaka Univ.) |
| 3rd Author's Name | Keishi Shiomi |
| 3rd Author's Affiliation | Osaka University(Osaka Univ.) |
| 4th Author's Name | Yasuhumi Fujiwara |
| 4th Author's Affiliation | Osaka University(Osaka Univ.) |
| Date | 2017-12-01 |
| Paper # | ED2017-58,CPM2017-101,LQE2017-71 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.45-48(ED), pp.45-48(CPM), pp.45-48(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |