Presentation | 2017-12-01 Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | ED2017-62,CPM2017-105,LQE2017-75 |
Date of Issue | 2017-11-23 (ED, CPM, LQE) |
Conference Information | |
Committee | LQE / CPM / ED |
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Conference Date | 2017/11/30(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Nagoya Inst. tech. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
Paper Information | |
Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of PBTI reliability in GaN-MOSFETs |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Yosuke Kajiwara |
1st Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
2nd Author's Name | Toshiya Yonehara |
2nd Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
3rd Author's Name | Daimotsu Kato |
3rd Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
4th Author's Name | Kenjiro Uesugi |
4th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
5th Author's Name | Aya Shindome |
5th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
6th Author's Name | Masahiko Kuraguchi |
6th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
7th Author's Name | Akira Mukai |
7th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
8th Author's Name | Hiroshi Ono |
8th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
9th Author's Name | Miki Yumoto |
9th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
10th Author's Name | Akira Yoshioka |
10th Author's Affiliation | Advanced Discrete Development Center, Toshiba Device & Storage Corporation(Toshiba) |
11th Author's Name | Shinya Nunoue |
11th Author's Affiliation | Corporate R&D center, Toshiba Corporation(Toshiba) |
Date | 2017-12-01 |
Paper # | ED2017-62,CPM2017-105,LQE2017-75 |
Volume (vol) | vol.117 |
Number (no) | ED-331,CPM-332,LQE-333 |
Page | pp.pp.65-68(ED), pp.65-68(CPM), pp.65-68(LQE), |
#Pages | 4 |
Date of Issue | 2017-11-23 (ED, CPM, LQE) |