| Presentation | 2017-11-30 Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and related materials. The photo-electrochemical oxidation was selectively conducted on the opened area of the SiO2-masked GaN surface. The Ga-oxide films were easily removed by the alkaline-treatments, where lower-damaged surface was obtained as compared with the surface obtained after the conventional dry-etching. Such low-damage etching process was very useful to fabricate the recessed-gate structure in AlGaN/GaN HEMTs. The threshold-voltage of HEMTs was precisely controlled with the etching depth with accuracy in a nanometer-range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN/GaN HEMT / electrochemical oxidation / wet etching / recessed-gate |
| Paper # | ED2017-54,CPM2017-97,LQE2017-67 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN/GaN HEMT |
| Keyword(3) | electrochemical oxidation |
| Keyword(4) | wet etching |
| Keyword(5) | recessed-gate |
| 1st Author's Name | Keisuke Uemura |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Satoru Matsumoto |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Masachika Toguchi |
| 3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 4th Author's Name | Keisuke Ito |
| 4th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 5th Author's Name | Taketomo Sato |
| 5th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2017-11-30 |
| Paper # | ED2017-54,CPM2017-97,LQE2017-67 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.23-26(ED), pp.23-26(CPM), pp.23-26(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |