| Presentation | 2017-11-30 Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the electronic structures and carrier dynamics in active layers of the devices. It is found that photocurrent spectroscopy reflects the joint density of states more directly than photovoltaic spectroscopy. In addition, the experimental results have been successfully reproduced by a simple rate-equation model considering carrier-leakage induced photo-current and inside recombination processes in the LEDs under reverse-bias condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LED / current - voltage characteristics / photocurrent / photovoltaic effects / III-nitride |
| Paper # | ED2017-50,CPM2017-93,LQE2017-63 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs |
| Sub Title (in English) | |
| Keyword(1) | LED |
| Keyword(2) | current - voltage characteristics |
| Keyword(3) | photocurrent |
| Keyword(4) | photovoltaic effects |
| Keyword(5) | III-nitride |
| 1st Author's Name | Yusuke Ota |
| 1st Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
| 2nd Author's Name | Shigeta Sakai |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
| 3rd Author's Name | Atsushi A. Yamaguchi |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. of Tech.) |
| Date | 2017-11-30 |
| Paper # | ED2017-50,CPM2017-93,LQE2017-63 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.7-10(ED), pp.7-10(CPM), pp.7-10(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |