Presentation	2017-12-01 Thermal annealing of semipolar AlN on m-plane sapphire Masafumi Jo, Satoshi Minami, Hideki Hirayama,
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Abstract(in English)
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Keyword(in English)
Paper #	ED2017-68,CPM2017-111,LQE2017-81
Date of Issue	2017-11-23 (ED, CPM, LQE)

Conference Information
Committee	LQE / CPM / ED
Conference Date	2017/11/30(2days)
Place (in Japanese)	(See Japanese page)
Place (in English)	Nagoya Inst. tech.
Topics (in Japanese)	(See Japanese page)
Topics (in English)	Nitride Semiconductor Devices, Materials, Related Technologies
Chair	Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba)
Vice Chair	Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU)
Secretary	Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.)
Assistant	Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT)

Paper Information
Registration To	Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Thermal annealing of semipolar AlN on m-plane sapphire
Sub Title (in English)
Keyword(1)
1st Author's Name	Masafumi Jo
1st Author's Affiliation	RIKEN(RIKEN)
2nd Author's Name	Satoshi Minami
2nd Author's Affiliation	RIKEN(RIKEN)
3rd Author's Name	Hideki Hirayama
3rd Author's Affiliation	RIKEN(RIKEN)
Date	2017-12-01
Paper #	ED2017-68,CPM2017-111,LQE2017-81
Volume (vol)	vol.117
Number (no)	ED-331,CPM-332,LQE-333
Page	pp.pp.91-94(ED), pp.91-94(CPM), pp.91-94(LQE),
#Pages	4
Date of Issue	2017-11-23 (ED, CPM, LQE)