| Presentation | 2017-12-01 Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its thermal and chemical properties are stable. A high-quality AlN film is necessary to realize a highly efficient device. However, high-density threading dislocations are generated from lattice mismatch and difference of thermal expansion coefficient between AlN and sapphire substrate. A technique combining a sputtering and thermal annealing against this problem has attracted attention. However, since AlN film deposited by the sputtering contains a lot of impurities, there is possibility that subsequent epitaxial layers will be adversely affected. Therefore, we aimed to realize high-quality and high-purity AlN template by combining MOVPE with less impurity density than sputtering. The crystallinity of AlN fabricated by this process was equivalent to that of the conventional fabrication methods and the impurity density was lower than that of the conventional fabrication methods. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / Sapphire / Sputtering / MOVPE / Annealing |
| Paper # | ED2017-66,CPM2017-109,LQE2017-79 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
|---|---|
| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Homoepitaxial growth on sputtered AlN templates by MOVPE |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | Sapphire |
| Keyword(3) | Sputtering |
| Keyword(4) | MOVPE |
| Keyword(5) | Annealing |
| 1st Author's Name | Ryo Yoshizawa |
| 1st Author's Affiliation | Mie University(Mie Univ.) |
| 2nd Author's Name | Yusuke Hayashi |
| 2nd Author's Affiliation | Mie University(Mie Univ.) |
| 3rd Author's Name | Hideto Miyake |
| 3rd Author's Affiliation | Mie University(Mie Univ.) |
| 4th Author's Name | Kazumasa Hiramatsu |
| 4th Author's Affiliation | Mie University(Mie Univ.) |
| Date | 2017-12-01 |
| Paper # | ED2017-66,CPM2017-109,LQE2017-79 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.83-86(ED), pp.83-86(CPM), pp.83-86(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |