| Presentation | 2017-12-01 Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operation has been reported by hydrogen termination and NO2 hole doping. Furthermore, by applying the Al2O3 protective film, operation stability in vacuum of about 2 hours is obtained. But, reliability tests and mechanisms have not been studied so far. In this study, we observed stable operation in air for 14.3 hours with NO2 hole doping and Al2O3 protective film deposition. Furthermore, the degradation mechanism was analyzed by comparing the electrical characteristics before and after the stress test. From the analysis results, it was found that the electric field concentrates at the gate edge, the interface between the Al2O3 film itself, the interface between the diamond surface and the Al2O3 film degraded, and an increase in the leakage current through the gate insulating film and a decrease in the drain current occur. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Diamond MOS FET / High frequency device / High power device / Direct current stress / Electrical properties |
| Paper # | ED2017-63,CPM2017-106,LQE2017-76 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress |
| Sub Title (in English) | |
| Keyword(1) | Diamond MOS FET |
| Keyword(2) | High frequency device |
| Keyword(3) | High power device |
| Keyword(4) | Direct current stress |
| Keyword(5) | Electrical properties |
| 1st Author's Name | Yuma Ishimatsu |
| 1st Author's Affiliation | Saga University(Saga Univ.) |
| 2nd Author's Name | Kosuke Funaki |
| 2nd Author's Affiliation | Saga University(Saga Univ.) |
| 3rd Author's Name | Satoshi Masuya |
| 3rd Author's Affiliation | Saga University(Saga Univ.) |
| 4th Author's Name | Kyosuke Miyazaki |
| 4th Author's Affiliation | Saga University(Saga Univ.) |
| 5th Author's Name | Takayoshi Oshima |
| 5th Author's Affiliation | Saga University(Saga Univ.) |
| 6th Author's Name | Makoto Kasu |
| 6th Author's Affiliation | Saga University(Saga Univ.) |
| 7th Author's Name | Toshiyuki Oishi |
| 7th Author's Affiliation | Saga University(Saga Univ.) |
| Date | 2017-12-01 |
| Paper # | ED2017-63,CPM2017-106,LQE2017-76 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.69-72(ED), pp.69-72(CPM), pp.69-72(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |