| Presentation | 2017-11-30 Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates Kenji Shiojima, Hiroyoshi Imadate, Tomoyoshi Mishima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report electrical characteristics of Schottky contacts with 9 different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, Pt) formed on clean m-plane surfaces by cleaving free-standing GaN substrates, comparing with the contacts on Ga-polar c-plane n-GaN surfaces grown on GaN substrates. The n-values in the forward current-voltage (I-V) characteristics are as good as 1.02 to 1.05 for the m-plane and 1.02 to 1.09 for the c-plane samples. We found that the reverse I-V curves of the both samples can be explained with the thermionic field emission theory, and the m-plane contacts have a metal work-function dependence of Schottky barrier heights as large as that of the Ga-polar c-plane n-GaN contacts. These results tell us that the cleaving method can provide the clean m-plane surfaces where Fermi-level pinning is as small as those of the c-plane. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | m-plane GaN / cleaving / metal workfunction / Schottky contact |
| Paper # | ED2017-56,CPM2017-99,LQE2017-69 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates |
| Sub Title (in English) | Metal workfunction dependence of Schottky barrier height |
| Keyword(1) | m-plane GaN |
| Keyword(2) | cleaving |
| Keyword(3) | metal workfunction |
| Keyword(4) | Schottky contact |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Hiroyoshi Imadate |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Tomoyoshi Mishima |
| 3rd Author's Affiliation | Hosei University(Hosei Univ.) |
| Date | 2017-11-30 |
| Paper # | ED2017-56,CPM2017-99,LQE2017-69 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.33-38(ED), pp.33-38(CPM), pp.33-38(LQE), |
| #Pages | 6 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |