| Presentation | 2017-11-30 Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy Kenji Shiojima, Takanori Hashizume, Masafumi Horikiri, Takeshi Tanaka, Tomoyoshi Mishima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We characterized the effect of the surface morphology on electrical properties of the n-GaN drift-layers by using scanning internal photoemission microscopy (SIPM). We grew 12-?m-thick low-carrier-concentration (around 1×1016 cm-3) n-GaN layers with both flat and wavy surface morphologies on free-standing GaN substrates by metal organic chemical vapor deposition. In the SIPM results, the samples with flat surfaces exhibited uniform photocurrent distribution independently of the carrier concentration. On the other hand, we obtained the same wavy pattern in the photocurrent maps as the surface morphology for the samples in low-carrier concentration. These results indicate that the amount of C incorporation during the growth was affected by off-angle of the GaN surface and the carrier compensation by C atoms was changed. We demonstrated that SIPM is a powerful tool to nondestructively visualized inhomogeneity of the carrier compensation over the wafer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | n-GaN / Schottky contact / Scanning internal photoemission microscopy / surface morphology |
| Paper # | ED2017-55,CPM2017-98,LQE2017-68 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy |
| Sub Title (in English) | |
| Keyword(1) | n-GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | Scanning internal photoemission microscopy |
| Keyword(4) | surface morphology |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Takanori Hashizume |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Masafumi Horikiri |
| 3rd Author's Affiliation | SCIOCS(SCIOCS) |
| 4th Author's Name | Takeshi Tanaka |
| 4th Author's Affiliation | SCIOCS(SCIOCS) |
| 5th Author's Name | Tomoyoshi Mishima |
| 5th Author's Affiliation | Hosei University(Hosei Univ.) |
| Date | 2017-11-30 |
| Paper # | ED2017-55,CPM2017-98,LQE2017-68 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.27-32(ED), pp.27-32(CPM), pp.27-32(LQE), |
| #Pages | 6 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |