| Presentation | 2017-11-09 [Invited Talk] Impurity Diffusion Modeling in SiC Masashi Uematsu, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiC is an attractive material for the application of high-power electronic devices. In this article, the current status of studies on impurity diffusion modeling in SiC, including on the dopant activation, is reviewed based on the diffusion mechanism governed by point defects, compared with the diffusion in Si and Ge. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor Processes / SiC / Impurity Diffusion / Diffusion Modeling / Point Defects |
| Paper # | SDM2017-64 |
| Date of Issue | 2017-11-02 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/11/9(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Impurity Diffusion Modeling in SiC |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor Processes |
| Keyword(2) | SiC |
| Keyword(3) | Impurity Diffusion |
| Keyword(4) | Diffusion Modeling |
| Keyword(5) | Point Defects |
| 1st Author's Name | Masashi Uematsu |
| 1st Author's Affiliation | Keio University(Keio Univ.) |
| Date | 2017-11-09 |
| Paper # | SDM2017-64 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-290 |
| Page | pp.pp.15-20(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-11-02 (SDM) |