| Presentation | 2017-12-01 Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen, Noriyuki Taoka, Akio Ohta, Hisashi Yamada, Tokio Takahashi, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen plasma enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Although Ga diffusion into the SiO2 layer was found after PDA, the amount of Ga is less than 0.1% even after PDA at 800 degree C. As a result, no significant change of the chemical bonding features was observed after PDA. Furthermore, reduction of interface trap density and fixed oxide charge density, and improvement of the breakdown properties of the SiO2 layer after PDA at 800 degree C were observed. These results indicate that the SiO2/GaN structure formed by ROPE-CVD has high thermal stability, which is a candidate structure for GaN power devices with high reliability. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiO2/GaN / Post deposition annealing / Interface properties / breakdown property |
| Paper # | ED2017-61,CPM2017-104,LQE2017-74 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures |
| Sub Title (in English) | |
| Keyword(1) | SiO2/GaN |
| Keyword(2) | Post deposition annealing |
| Keyword(3) | Interface properties |
| Keyword(4) | breakdown property |
| 1st Author's Name | NguyenXuan Truyen |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Noriyuki Taoka |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology GaN OIL(AIST GaN OIL) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Hisashi Yamada |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology GaN OIL(AIST GaN OIL) |
| 5th Author's Name | Tokio Takahashi |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology GaN OIL(AIST GaN OIL) |
| 6th Author's Name | Mitsuhisa Ikeda |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 7th Author's Name | Katsunori Makihara |
| 7th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 8th Author's Name | Mitsuaki Shimizu |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology GaN OIL(AIST GaN OIL) |
| 9th Author's Name | Seiichi Miyazaki |
| 9th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2017-12-01 |
| Paper # | ED2017-61,CPM2017-104,LQE2017-74 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.61-64(ED), pp.61-64(CPM), pp.61-64(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |