| Presentation | 2017-12-01 A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi-quantum-well solar cell structures by metalorganic chemical vapor deposition, and their material and device properties were investigated. The results showed that the samples grown on AlN template had a better crystal quality with a larger in-plane compressive strain than the samples on sapphire, and solar cells fabricated on sapphire mostly exhibited better performance than those on AlN template. An analysis of the photoluminescence measurements indicated that a critical InGaN well thickness related to the generation of nonradiative recombination centers, which affects the internal and external quantum efficiencies, was thinner in samples grown on AlN template than in samples on sapphire. The critical thickness was speculated to be related to the large in-plane compressive strain in the samples on AlN template. In contrast, a sample on AlN template with a sufficiently thin InGaN well thickness of 1.0 nm exhibited better solar cell performance than one on sapphire. This implies that the improved crystal quality contributed to the improvement of internal quantum efficiency as long as the well layer was thinner than the critical thickness. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN/GaN MQW structure / Solar cells / MOCVD |
| Paper # | ED2017-57,CPM2017-100,LQE2017-70 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
|---|---|
| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition |
| Sub Title (in English) | |
| Keyword(1) | InGaN/GaN MQW structure |
| Keyword(2) | Solar cells |
| Keyword(3) | MOCVD |
| 1st Author's Name | Takuma Mori |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 2nd Author's Name | Miki Ohta |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 3rd Author's Name | Hiroki Harada |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 4th Author's Name | Shinya Kato |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 5th Author's Name | Makoto Miyoshi |
| 5th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 6th Author's Name | Takashi Egawa |
| 6th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| Date | 2017-12-01 |
| Paper # | ED2017-57,CPM2017-100,LQE2017-70 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.39-44(ED), pp.39-44(CPM), pp.39-44(LQE), |
| #Pages | 6 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |