| Presentation | 2017-11-09 [Invited Talk] Characterization and modeling of SiC power MOSFET Takashi Sato, Kazuki Oishi, Masayuki Hiromoto, Michihiro Shintani, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2017-65 |
| Date of Issue | 2017-11-02 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/11/9(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Characterization and modeling of SiC power MOSFET |
| Sub Title (in English) | |
| Keyword(1) | |
| Keyword(2) | |
| Keyword(3) | |
| Keyword(4) | |
| Keyword(5) | |
| 1st Author's Name | Takashi Sato |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Kazuki Oishi |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Masayuki Hiromoto |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 4th Author's Name | Michihiro Shintani |
| 4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| Date | 2017-11-09 |
| Paper # | SDM2017-65 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-290 |
| Page | pp.pp.21-26(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-11-02 (SDM) |