Presentation | 2017-11-09 [Invited Talk] Characterization and modeling of SiC power MOSFET Takashi Sato, Kazuki Oishi, Masayuki Hiromoto, Michihiro Shintani, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | SDM2017-65 |
Date of Issue | 2017-11-02 (SDM) |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 2017/11/9(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Process, Device, Circuit simulation, etc. |
Chair | Tatsuya Kunikiyo(Renesas) |
Vice Chair | Takahiro Shinada(Tohoku Univ.) |
Secretary | Takahiro Shinada(Tohoku Univ.) |
Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Characterization and modeling of SiC power MOSFET |
Sub Title (in English) | |
Keyword(1) | |
Keyword(2) | |
Keyword(3) | |
Keyword(4) | |
Keyword(5) | |
1st Author's Name | Takashi Sato |
1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
2nd Author's Name | Kazuki Oishi |
2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
3rd Author's Name | Masayuki Hiromoto |
3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
4th Author's Name | Michihiro Shintani |
4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
Date | 2017-11-09 |
Paper # | SDM2017-65 |
Volume (vol) | vol.117 |
Number (no) | SDM-290 |
Page | pp.pp.21-26(SDM), |
#Pages | 6 |
Date of Issue | 2017-11-02 (SDM) |