Presentation 2017-11-17
[Invited Talk] Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices
Takashi Nagase, Shoya Sanda, Fumiya Shiono, Takashi Kobayashi, Hiroyoshi Naito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report that the use of a top-gate/bottom-contact (TG/BC) configuration in solution-processed organic field-effect transistors (OFETs) allows extracting high field-effect mobilities and high operational stabilities irrespective of the surface energy of substrates. High average mobility over 8 cm2/Vs can be achieved in TG/BC OFETs based on soluble small-molecule semiconductors processed by spin coating. TG/BC OFETs are also useful for developing solution-processable organic nonvolatile memory devices. Good memory operations in solution-processed TG/BC OFET memory devices by utilizing the optical functions of organic semiconductors are also reported.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organic Transistors / Soluble Organic Semiconductors / Top-gate Configuration / Nonvolatile Organic Memory
Paper # OME2017-27
Date of Issue 2017-11-10 (OME)

Conference Information
Committee OME
Conference Date 2017/11/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka Univ. Nakanoshima Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Organic devices and sensors, etc.
Chair Tatsuo Mori(Aichi Inst. of Tech.)
Vice Chair Yutaka Majima(Tokyo Inst. of Tech.)
Secretary Yutaka Majima(NICT)
Assistant Hirotake Kajii(Osaka Univ.) / Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.)

Paper Information
Registration To Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices
Sub Title (in English)
Keyword(1) Organic Transistors
Keyword(2) Soluble Organic Semiconductors
Keyword(3) Top-gate Configuration
Keyword(4) Nonvolatile Organic Memory
1st Author's Name Takashi Nagase
1st Author's Affiliation Osaka Prefecture University(Osaka Pref. Univ.)
2nd Author's Name Shoya Sanda
2nd Author's Affiliation Osaka Prefecture University(Osaka Pref. Univ.)
3rd Author's Name Fumiya Shiono
3rd Author's Affiliation Osaka Prefecture University(Osaka Pref. Univ.)
4th Author's Name Takashi Kobayashi
4th Author's Affiliation Osaka Prefecture University(Osaka Pref. Univ.)
5th Author's Name Hiroyoshi Naito
5th Author's Affiliation Osaka Prefecture University(Osaka Pref. Univ.)
Date 2017-11-17
Paper # OME2017-27
Volume (vol) vol.117
Number (no) OME-313
Page pp.pp.1-6(OME),
#Pages 6
Date of Issue 2017-11-10 (OME)