Presentation | 2017-11-17 [Invited Talk] Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices Takashi Nagase, Shoya Sanda, Fumiya Shiono, Takashi Kobayashi, Hiroyoshi Naito, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report that the use of a top-gate/bottom-contact (TG/BC) configuration in solution-processed organic field-effect transistors (OFETs) allows extracting high field-effect mobilities and high operational stabilities irrespective of the surface energy of substrates. High average mobility over 8 cm2/Vs can be achieved in TG/BC OFETs based on soluble small-molecule semiconductors processed by spin coating. TG/BC OFETs are also useful for developing solution-processable organic nonvolatile memory devices. Good memory operations in solution-processed TG/BC OFET memory devices by utilizing the optical functions of organic semiconductors are also reported. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Organic Transistors / Soluble Organic Semiconductors / Top-gate Configuration / Nonvolatile Organic Memory |
Paper # | OME2017-27 |
Date of Issue | 2017-11-10 (OME) |
Conference Information | |
Committee | OME |
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Conference Date | 2017/11/17(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Osaka Univ. Nakanoshima Center |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Organic devices and sensors, etc. |
Chair | Tatsuo Mori(Aichi Inst. of Tech.) |
Vice Chair | Yutaka Majima(Tokyo Inst. of Tech.) |
Secretary | Yutaka Majima(NICT) |
Assistant | Hirotake Kajii(Osaka Univ.) / Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.) |
Paper Information | |
Registration To | Technical Committee on Organic Molecular Electronics |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices |
Sub Title (in English) | |
Keyword(1) | Organic Transistors |
Keyword(2) | Soluble Organic Semiconductors |
Keyword(3) | Top-gate Configuration |
Keyword(4) | Nonvolatile Organic Memory |
1st Author's Name | Takashi Nagase |
1st Author's Affiliation | Osaka Prefecture University(Osaka Pref. Univ.) |
2nd Author's Name | Shoya Sanda |
2nd Author's Affiliation | Osaka Prefecture University(Osaka Pref. Univ.) |
3rd Author's Name | Fumiya Shiono |
3rd Author's Affiliation | Osaka Prefecture University(Osaka Pref. Univ.) |
4th Author's Name | Takashi Kobayashi |
4th Author's Affiliation | Osaka Prefecture University(Osaka Pref. Univ.) |
5th Author's Name | Hiroyoshi Naito |
5th Author's Affiliation | Osaka Prefecture University(Osaka Pref. Univ.) |
Date | 2017-11-17 |
Paper # | OME2017-27 |
Volume (vol) | vol.117 |
Number (no) | OME-313 |
Page | pp.pp.1-6(OME), |
#Pages | 6 |
Date of Issue | 2017-11-10 (OME) |