Presentation 2017-11-09
[Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu, Yoshihiro Kangawa, Koichi Kakimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia forming adducts. This adducts change into GaN units after complicated reaction in vapor phase and these GaN units adsorb onto substrate. However, our first principles and thermodynamic analysis shows that adduct formation is not main reaction. Moreover, we unify first principles calculations, thermodynamics analysis and fluid dynamic simulations.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / MOVPE growth / First principles calculations / Thermodynamic analysis / Fluid dynamics / Multi-physics simulations
Paper # SDM2017-61
Date of Issue 2017-11-02 (SDM)

Conference Information
Committee SDM
Conference Date 2017/11/9(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Sub Title (in English)
Keyword(1) GaN
Keyword(2) MOVPE growth
Keyword(3) First principles calculations
Keyword(4) Thermodynamic analysis
Keyword(5) Fluid dynamics
Keyword(6) Multi-physics simulations
1st Author's Name Kenji Shiraishi
1st Author's Affiliation Nagoya University(Nagoya Univ.)
2nd Author's Name Kazuki Sekiguchi
2nd Author's Affiliation Nagoya University(Nagoya Univ.)
3rd Author's Name Kenta Chokawa
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Hiroki Shirakawa
4th Author's Affiliation Nagoya University(Nagoya Univ.)
5th Author's Name Kento Kawakami
5th Author's Affiliation Nagoya University(Nagoya Univ.)
6th Author's Name Yoshihiro Yamamoto
6th Author's Affiliation Nagoya University(Nagoya Univ.)
7th Author's Name Masaaki Araidai
7th Author's Affiliation Nagoya University(Nagoya Univ.)
8th Author's Name Naoya Okamoto
8th Author's Affiliation Nagoya University(Nagoya Univ.)
9th Author's Name Katsumori Yoshimatsu
9th Author's Affiliation Nagoya University(Nagoya Univ.)
10th Author's Name Yoshihiro Kangawa
10th Author's Affiliation Kyushu University(Kyushu Univ.)
11th Author's Name Koichi Kakimoto
11th Author's Affiliation Kyushu University(Kyushu Univ.)
Date 2017-11-09
Paper # SDM2017-61
Volume (vol) vol.117
Number (no) SDM-290
Page pp.pp.1-4(SDM),
#Pages 4
Date of Issue 2017-11-02 (SDM)