| Presentation | 2017-11-30 Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates electrons than GaN on the + c plane substrate, making it possible to control lower impurity concentration in the drift layer of power device. Therefore, there is a possibility of realizing a high voltage device. However, there is a problem that the amount of oxygen incorporation is as high as 1018 cm-3 or more, therefore the depletion layer does not extend and the operating voltage becomes low. Therefore, in this research, we tried to grow at higher temperature to reduce oxygen concentration. As a result, reduction of luminescence caused by oxygen can be confirmed from PL measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / -c-plane / PL / SIMS / Oxygen concentration |
| Paper # | ED2017-53,CPM2017-96,LQE2017-66 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2017/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) / Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / Mayumi Takeyama(SEI) / Michihiko Suhara(Nihon Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | -c-plane |
| Keyword(3) | PL |
| Keyword(4) | SIMS |
| Keyword(5) | Oxygen concentration |
| 1st Author's Name | Tsukasa Kono |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Maki Kushimoto |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Kentaro Nagamatsu |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Shugo Nitta |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Yoshio Honda |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 6th Author's Name | Hiroshi Amano |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2017-11-30 |
| Paper # | ED2017-53,CPM2017-96,LQE2017-66 |
| Volume (vol) | vol.117 |
| Number (no) | ED-331,CPM-332,LQE-333 |
| Page | pp.pp.19-22(ED), pp.19-22(CPM), pp.19-22(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |