| Presentation | 2017-11-09 Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu, Fujii Hiroki, Takahiro Mori, Yutaka Akiyama, Yasuo Yamaguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits uch as breakdown voltage $BV$ and specific on-resistance $R_{sp}$. The superiority of a novel STI-based p-channel LDMOSFET with a hot electron cooling (HEC) layer against the conventional method to improve HC immunity (i.e. extending the p- drift length) is confirmed by TCAD simulation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-LDMOSFET / hot carrier stress / gate oxide breakdown |
| Paper # | SDM2017-63 |
| Date of Issue | 2017-11-02 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/11/9(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET |
| Sub Title (in English) | |
| Keyword(1) | p-LDMOSFET |
| Keyword(2) | hot carrier stress |
| Keyword(3) | gate oxide breakdown |
| 1st Author's Name | Atsushi Sakai |
| 1st Author's Affiliation | Renesas Electronics(REL) |
| 2nd Author's Name | Katsumi Eikyu |
| 2nd Author's Affiliation | Renesas Electronics(REL) |
| 3rd Author's Name | Fujii Hiroki |
| 3rd Author's Affiliation | Renesas Semiconductor Manufacturing(RSMC) |
| 4th Author's Name | Takahiro Mori |
| 4th Author's Affiliation | Renesas Semiconductor Manufacturing(RSMC) |
| 5th Author's Name | Yutaka Akiyama |
| 5th Author's Affiliation | Renesas Electronics(REL) |
| 6th Author's Name | Yasuo Yamaguchi |
| 6th Author's Affiliation | Renesas Electronics(REL) |
| Date | 2017-11-09 |
| Paper # | SDM2017-63 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-290 |
| Page | pp.pp.11-14(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-11-02 (SDM) |