Presentation 2017-11-10
[Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method
Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains an exponential term of the dominant time constant of the whole device structure obtained by the matrix exponential method. The proposed metric allows larger time step widths than the conventional metric of the 2nd-order approximation of the local truncation error because it focuses on the dominant part of the transient response and its truncation error approximation is more accurate. Total CPU-time of the transient simulation of a silicon power DMOSFET by using the proposed method decreases down to 30% of that by the conventional metric with assuring the current accuracy of the dominant transient response.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power device / Transient device simulation / Time step control / Local truncation error / Matrix exponential method / Arnoldi method
Paper # SDM2017-70
Date of Issue 2017-11-02 (SDM)

Conference Information
Committee SDM
Conference Date 2017/11/9(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method
Sub Title (in English)
Keyword(1) Power device
Keyword(2) Transient device simulation
Keyword(3) Time step control
Keyword(4) Local truncation error
Keyword(5) Matrix exponential method
Keyword(6) Arnoldi method
1st Author's Name Shigetaka Kumashiro
1st Author's Affiliation Kyoto Institute of Technology(KIT)
2nd Author's Name Tatsuya Kamei
2nd Author's Affiliation Kyoto Institute of Technology(KIT)
3rd Author's Name Akira Hiroki
3rd Author's Affiliation Kyoto Institute of Technology(KIT)
4th Author's Name Kazutoshi Kobayashi
4th Author's Affiliation Kyoto Institute of Technology(KIT)
Date 2017-11-10
Paper # SDM2017-70
Volume (vol) vol.117
Number (no) SDM-290
Page pp.pp.47-52(SDM),
#Pages 6
Date of Issue 2017-11-02 (SDM)