| Presentation | 2017-10-25 Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size (1×1 ?m2, 0.5×0.5 ?m2, 0.25×0.25 ?m2) were measured with array test circuit. As a result, it was found that the localized large SILC distribution is normalized by SILC defect density, not the gate current density. With the results, SILC defect density per unit gate area on each stress and measurement condition was calculated. Additionally, the SILC defect density drastically decreased when the Si surface was atomically flattened compared to the conventional samples. These results can be a key to reveal the SILC generation mechanism. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Stress Induced Leakage Current / Defect Density / Atomically Flattening Process / Si Surface Roughness |
| Paper # | SDM2017-51 |
| Date of Issue | 2017-10-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/10/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG-JTITLE |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process |
| Sub Title (in English) | |
| Keyword(1) | Stress Induced Leakage Current |
| Keyword(2) | Defect Density |
| Keyword(3) | Atomically Flattening Process |
| Keyword(4) | Si Surface Roughness |
| 1st Author's Name | Hyeonwoo Park |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ) |
| 2nd Author's Name | Rihito Kuroda |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ) |
| 3rd Author's Name | Tetsuya Goto |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ) |
| 4th Author's Name | Tomoyuki Suwa |
| 4th Author's Affiliation | Tohoku University(Tohoku Univ) |
| 5th Author's Name | Akinobu Teramoto |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ) |
| 6th Author's Name | Daiki Kimoto |
| 6th Author's Affiliation | Tohoku University(Tohoku Univ) |
| 7th Author's Name | Shigetoshi Sugawa |
| 7th Author's Affiliation | Tohoku University(Tohoku Univ) |
| Date | 2017-10-25 |
| Paper # | SDM2017-51 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-260 |
| Page | pp.pp.9-14(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-10-18 (SDM) |