| Presentation | 2017-11-10 [Invited Talk] Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities Nobuyuki Sano, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The classical and quantum effects associated with discrete impurities on transport characteristics and device modeling in nano-scale semiconductor devices are discussed. We stress the importance of the length-scale implicitly involved in device simulations, which becomes apparent when the continuous description of impurity is switched into the discrete. The physics behind the discrete impurity model employed for Drift-Diffusion simulations is fully explained. Also, the impurity-limited resistance due to localized multiple impurities in quasi-1D nanowires is analytically derived by employing the scattering theory. We then discuss the variability of the resistance and the physical origin of self-averaging which shows up as the channel length gets longer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | random dopant fluctuations / device simulation / Coulomb potential / nanowire / impurity scattering / multiple-scattering / self-average |
| Paper # | SDM2017-68 |
| Date of Issue | 2017-11-02 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/11/9(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities |
| Sub Title (in English) | Random Dopant Fluctuations and Self-Averaging |
| Keyword(1) | random dopant fluctuations |
| Keyword(2) | device simulation |
| Keyword(3) | Coulomb potential |
| Keyword(4) | nanowire |
| Keyword(5) | impurity scattering |
| Keyword(6) | multiple-scattering |
| Keyword(7) | self-average |
| 1st Author's Name | Nobuyuki Sano |
| 1st Author's Affiliation | University of Tsukuba(Univ. Tsukuba) |
| Date | 2017-11-10 |
| Paper # | SDM2017-68 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-290 |
| Page | pp.pp.37-42(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-11-02 (SDM) |