| Presentation | 2017-10-25 Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application Sohya Kudoh, Shun-ichiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It was found that interface roughness at the tunneling layer/Si substrate significantly affects the low voltage operation of MONOS NVM. In our previous reports, the atomic steps were realized by annealing in Ar/H2 ambient, while the surface roughness with a few um periodic was also formed. In this report, we have investigated the effect of the chemical oxide (0.7 nm) formed on p-Si(100) by immersing in H2O2 for the flattening process in Ar/4%H2 ambient. It was revealed that the periodic surface roughness formation was suppressed by chemical oxide passivation process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / atomically flattening process / Ar/H2 / Hf / MONOS type nonvolatile memory |
| Paper # | SDM2017-52 |
| Date of Issue | 2017-10-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/10/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | atomically flattening process |
| Keyword(3) | Ar/H2 |
| Keyword(4) | Hf |
| Keyword(5) | MONOS type nonvolatile memory |
| 1st Author's Name | Sohya Kudoh |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 2nd Author's Name | Shun-ichiro Ohmi |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| Date | 2017-10-25 |
| Paper # | SDM2017-52 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-260 |
| Page | pp.pp.15-19(SDM), |
| #Pages | 5 |
| Date of Issue | 2017-10-18 (SDM) |