| Presentation | 2017-10-25 [Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP Tomoyasu Kakegawa, Takuya Futase, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We achieved excellent planarization for a pre-metal dielectric (PMD) layer regardless of its pattern density distribution by making the distribution uniform before chemical mechanical polishing (CMP) without any stopper layer. The distribution control was done by lithography using a checkered reticle on the high-density PMD area followed by etching of the PMD layer to uniformize the CMP rate at both areas. After this planarization, the PMD layer was flattened in the local and global regions. The PMD step-height within chip was approximately 8 nm (approx. 1% of PMD height), which is a variation of less than one tenth compared with conventional planarization, and the non-uniformity of PMD thickness within wafer was approximately 2%. The planarized PMD layer suppressed the defocusing in lithography for contact hole formation on the layer, thus dramatically reducing contact-open failures in a chip of approximately 50 × 110 nm in diameter with 620-nm-high contact holes. The number of defects was one-thousandth that of a conventionally planarized PMD layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Atomic force microscopy (AFM) / chemical mechanical polishing (CMP) / contact / density distribution / planarization / pre-metal dielectric (PMD) / voltage contrast(VC) |
| Paper # | SDM2017-50 |
| Date of Issue | 2017-10-18 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/10/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP |
| Sub Title (in English) | |
| Keyword(1) | Atomic force microscopy (AFM) |
| Keyword(2) | chemical mechanical polishing (CMP) |
| Keyword(3) | contact |
| Keyword(4) | density distribution |
| Keyword(5) | planarization |
| Keyword(6) | pre-metal dielectric (PMD) |
| Keyword(7) | voltage contrast(VC) |
| 1st Author's Name | Tomoyasu Kakegawa |
| 1st Author's Affiliation | SanDisk Limited(SanDisk) |
| 2nd Author's Name | Takuya Futase |
| 2nd Author's Affiliation | SanDisk Limited(SanDisk) |
| Date | 2017-10-25 |
| Paper # | SDM2017-50 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-260 |
| Page | pp.pp.1-7(SDM), |
| #Pages | 7 |
| Date of Issue | 2017-10-18 (SDM) |