| Presentation | 2017-10-26 Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO2 (HZO) thin film, on the ferroelectricity of HZO films was investigated. The remanent polarization (2Pr = Pr+ － Pr－) of a TiN-electroded capacitor with a ZrO2-seed layer (ZrO2-seed) was approximately 1.4 times larger than that of capacitors without a seed layer. Furthermore, the maximum 2Pr was exhibited when the thickness of the ZrO2-seed layer was 2.0 nm. For the ZrO2-seed case, vertical grain growth of the HZO film was observed from the polycrystalline ZrO2 seed layer consisted mainly of orthorhombic and tetragonal phases after the ALD process. Moreover, large crystal grains were formed, in which the ZrO2 seed layer and HZO film were combined, which led to significantly improved ferroelectricity. In conclusion, this work suggests that the ZrO2 seed layer plays an important role as a nucleation layer of the HZO film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric HfxZr1-xO2 thin film / ZrO2 seed layer / Atomic layer deposition (ALD) / MFM (Metal-Ferroelectric-Metal) capacitor |
| Paper # | SDM2017-57 |
| Date of Issue | 2017-10-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/10/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric HfxZr1-xO2 thin film |
| Keyword(2) | ZrO2 seed layer |
| Keyword(3) | Atomic layer deposition (ALD) |
| Keyword(4) | MFM (Metal-Ferroelectric-Metal) capacitor |
| 1st Author's Name | Takashi Onaya |
| 1st Author's Affiliation | Meiji University/National Institute for Materials Science(Meiji Univ./NIMS) |
| 2nd Author's Name | Toshihide Nabatame |
| 2nd Author's Affiliation | National Institute for Materials Science/CREST, Japan Science and Technology Agency(NIMS/JST) |
| 3rd Author's Name | Naomi Sawamoto |
| 3rd Author's Affiliation | Meiji University(Meiji Univ.) |
| 4th Author's Name | Akihiko Ohi |
| 4th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 5th Author's Name | Naoki Ikeda |
| 5th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 6th Author's Name | Toyohiro Chikyow |
| 6th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 7th Author's Name | Atsushi Ogura |
| 7th Author's Affiliation | Meiji University(Meiji Univ.) |
| Date | 2017-10-26 |
| Paper # | SDM2017-57 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-260 |
| Page | pp.pp.39-44(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-10-18 (SDM) |