| Presentation | 2017-10-25 [Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneath materials and deposition temperature. In this paper, the pentacene film deposited at 100oC on a HfO2 bottom-gate insulator, which is one of the most famous high-k materials, was investigated to reduce the operation voltage of OFETs. It was found that the grain size of a pentacene film was increased to 10 um, and it was larger than that on SiO2. Furthermore, a nitrogen-doped LaB6 interfacial layer deposited on an SiO2 gate insulator also increased the grain size of the pentacene film, and the device characteristics of the OFET improved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pentacene / HfO2 / nitrogen-doped LaB6 / interface control / high temperature deposition / surface morphology |
| Paper # | SDM2017-54 |
| Date of Issue | 2017-10-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/10/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | HfO2 |
| Keyword(3) | nitrogen-doped LaB6 |
| Keyword(4) | interface control |
| Keyword(5) | high temperature deposition |
| Keyword(6) | surface morphology |
| 1st Author's Name | Yasutaka Maeda |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 2nd Author's Name | Yeyuan Liu |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 3rd Author's Name | Mizuha Hiroki |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 4th Author's Name | Shun-ichiro Ohmi |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| Date | 2017-10-25 |
| Paper # | SDM2017-54 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-260 |
| Page | pp.pp.25-30(SDM), |
| #Pages | 6 |
| Date of Issue | 2017-10-18 (SDM) |