Presentation 2017-10-26
[Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Highly reliable Physical Unclonable Functions (PUF) based on 28nm Split-Gate MONOS (SG-MONOS) embedded flash memory is developed for hardware security applications. In this paper, we investigate wide range tolerance on applied voltage, temperature and aging influence for basic PUF characteristics utilizing SG-MONOS initial Vt variation. High-temperature stable PUF at the junction temperature (Tj) of 170oC can be confirmed by applying widely used automotive quality SG-MONOS flash memory. In addition, newly implemented offset read scheme achieves 0% error rate for PUF reliability without ECC.
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Keyword(in English)
Paper # SDM2017-58
Date of Issue 2017-10-18 (SDM)

Conference Information
Committee SDM
Conference Date 2017/10/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Niche, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
Sub Title (in English)
Keyword(1)
Keyword(2)
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1st Author's Name Takahiro Shimoi
1st Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
2nd Author's Name Tomoya Saito
2nd Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
3rd Author's Name Hirokazu Nagase
3rd Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
4th Author's Name Masayuki Izuna
4th Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
5th Author's Name Akihiko Kanda
5th Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
6th Author's Name Takashi Ito
6th Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
7th Author's Name Takashi Kono
7th Author's Affiliation Renesas Electronics Corporation(Renesas Electronics)
Date 2017-10-26
Paper # SDM2017-58
Volume (vol) vol.117
Number (no) SDM-260
Page pp.pp.45-49(SDM),
#Pages 5
Date of Issue 2017-10-18 (SDM)