| Presentation | 2017-08-31 Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition Yuki Nara, Syunki Narita, Hideki Nakazawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN target, and formed SiC interfacial buffer layers on the AlN layers by ultralow pressure chemical vapor deposition using monomethylsilane to grow SiC films on the low temperature buffer layers by pulsed laser deposition using a SiC target. We formed the SiC buffer layers under different conditions, and investigated the crystallinity and surface morphology of the SiC films grown on the buffer layers. We successfully grew the SiC film with the lowest surface roughness on the buffer layer formed at a substrate temperature of 500°C, an MMS pressure of 2.0×10^-3 Pa, and a duration time of 5 min. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon carbide / Aluminum nitride / Pulsed laser deposition |
| Paper # | R2017-25,EMD2017-19,CPM2017-40,OPE2017-49,LQE2017-22 |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | R / EMD / CPM / LQE / OPE |
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| Conference Date | 2017/8/31(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT-AT) / Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kazutoshi Kato(Kyushu Univ.) |
| Vice Chair | Akira Asato(Fujitsu) / / Mayumi Takeyama(Kitami Inst. of Tech.) / Kiichi Hamamoto(Kyusyu Univ.) / Kouki Sato(Furukawa Electric Industries) |
| Secretary | Akira Asato(Hosei Univ.) / (RTRI) / Mayumi Takeyama(Tohoku Gakuin Univ.) / Kiichi Hamamoto(Muroran Inst. of Tech.) / Kouki Sato(Nihon Univ.) |
| Assistant | Shinji Inoue(Kansai Univ.) / Hiroyuki Okamura(Hiroshima Univ.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Akage(NTT) / Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Takuo Tanemura(Univ. of Tokyo) |
| Paper Information | |
| Registration To | Technical Committee on Reliability / Technical Committee on Electromechanical Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on OptoElectronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | Aluminum nitride |
| Keyword(3) | Pulsed laser deposition |
| 1st Author's Name | Yuki Nara |
| 1st Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 2nd Author's Name | Syunki Narita |
| 2nd Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| 3rd Author's Name | Hideki Nakazawa |
| 3rd Author's Affiliation | Hirosaki University(Hirosaki Univ.) |
| Date | 2017-08-31 |
| Paper # | R2017-25,EMD2017-19,CPM2017-40,OPE2017-49,LQE2017-22 |
| Volume (vol) | vol.117 |
| Number (no) | R-191,EMD-192,CPM-193,OPE-194,LQE-195 |
| Page | pp.pp.7-10(R), pp.7-10(EMD), pp.7-10(CPM), pp.7-10(OPE), pp.7-10(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) |