Presentation 2017-07-22
[Invited Talk] Development of Low Damage Facing Target Sputter-deposition Processes
Yoichi Hoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) About 43 years ago, I firstly challenged the deposition of YIG films by using a conventional sputtering system. Deposition of stoichiometric YIG films was a difficult challenge since high energy negative oxygen ions and secondary electrons emitted from target surface bombard the substrate surface during deposition. In order to realize high rate sputter-deposition of YIG film, I studied sputtering phenomena and invented Facing-Target sputtering method in which substrate bombardment of negative oxygen ions and secondary electrons were completely suppressed. Recently, low damage sputter-deposition process using the Facing-Target sputtering method has been developed for organic devices. In this paper, history of the low damage sputter-deposition process for the formation of top electrode films in OLED will be explained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Facing-Traget sputtering / negative oxygen ion / secondary electron / OLED / low damage sputtering
Paper # CPM2017-38
Date of Issue 2017-07-14 (CPM)

Conference Information
Committee CPM
Conference Date 2017/7/21(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Fumihiko Hirose(Yamagata Univ.)
Vice Chair Mayumi Takeyama(Kitami Inst. of Tech.)
Secretary Mayumi Takeyama(Nihon Univ.)
Assistant Yuichi Akage(NTT)

Paper Information
Registration To Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Development of Low Damage Facing Target Sputter-deposition Processes
Sub Title (in English)
Keyword(1) Facing-Traget sputtering
Keyword(2) negative oxygen ion
Keyword(3) secondary electron
Keyword(4) OLED
Keyword(5)
Keyword(6) low damage sputtering
1st Author's Name Yoichi Hoshi
1st Author's Affiliation Tokyo Polytechnic University(Tokyo Polytechnic Univ.)
Date 2017-07-22
Paper # CPM2017-38
Volume (vol) vol.117
Number (no) CPM-148
Page pp.pp.89-94(CPM),
#Pages 6
Date of Issue 2017-07-14 (CPM)