Presentation 2017-07-31
Multi Sensor Operation using Octagonal Multi-Output MOSFET
Tomochika Harada,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) By using the Si material and the MOSFET type as the sensor device, it is possible to fabricate the various sensor device by the existing Si process, and it is possible to obtain advantages such as low cost and ease of circuit integration etc. Further, by making the octagonal structure, the electrode arrangement becomes line symmetric and point symmetrical, and the effect of suppressing the deviation of the terminals at the time of manufacture can be expected. In this paper, the multifunctional sensor of octagonal MOSFET is evaluated, since it can be used as a stress detection, a temperature detection, and a Hall effect sensor, in order to use it as a basic element of a multiple sensor.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Octagonal MOSFET / stress sensor / Hall sensor / temperature sensor / multi-output MOSFET
Paper # SDM2017-32,ICD2017-20
Date of Issue 2017-07-24 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2017/7/31(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Hokkaido-Univ. Multimedia Education Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications
Chair Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.)
Vice Chair Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK)
Secretary Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Multi Sensor Operation using Octagonal Multi-Output MOSFET
Sub Title (in English)
Keyword(1) Octagonal MOSFET
Keyword(2) stress sensor
Keyword(3) Hall sensor
Keyword(4) temperature sensor
Keyword(5) multi-output MOSFET
1st Author's Name Tomochika Harada
1st Author's Affiliation Yamagata University(Yamagata Univ.)
Date 2017-07-31
Paper # SDM2017-32,ICD2017-20
Volume (vol) vol.117
Number (no) SDM-166,ICD-167
Page pp.pp.7-12(SDM), pp.7-12(ICD),
#Pages 6
Date of Issue 2017-07-24 (SDM, ICD)