| Presentation | 2017-07-31 Multi Sensor Operation using Octagonal Multi-Output MOSFET Tomochika Harada, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | By using the Si material and the MOSFET type as the sensor device, it is possible to fabricate the various sensor device by the existing Si process, and it is possible to obtain advantages such as low cost and ease of circuit integration etc. Further, by making the octagonal structure, the electrode arrangement becomes line symmetric and point symmetrical, and the effect of suppressing the deviation of the terminals at the time of manufacture can be expected. In this paper, the multifunctional sensor of octagonal MOSFET is evaluated, since it can be used as a stress detection, a temperature detection, and a Hall effect sensor, in order to use it as a basic element of a multiple sensor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Octagonal MOSFET / stress sensor / Hall sensor / temperature sensor / multi-output MOSFET |
| Paper # | SDM2017-32,ICD2017-20 |
| Date of Issue | 2017-07-24 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2017/7/31(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Chair | Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Multi Sensor Operation using Octagonal Multi-Output MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Octagonal MOSFET |
| Keyword(2) | stress sensor |
| Keyword(3) | Hall sensor |
| Keyword(4) | temperature sensor |
| Keyword(5) | multi-output MOSFET |
| 1st Author's Name | Tomochika Harada |
| 1st Author's Affiliation | Yamagata University(Yamagata Univ.) |
| Date | 2017-07-31 |
| Paper # | SDM2017-32,ICD2017-20 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-166,ICD-167 |
| Page | pp.pp.7-12(SDM), pp.7-12(ICD), |
| #Pages | 6 |
| Date of Issue | 2017-07-24 (SDM, ICD) |