Presentation 2017-08-01
Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage
Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage and propose an equivalent MOSFET circuit where temperature dependence of threshold voltage is reduced. Proposal circuit consists of PTAT voltage generator circuits and level-shift circuits to reduce temperature dependence of threshold voltage. The proposed circuit was fabricated with 0.18μm n-well CMOS process and measured.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOSFET / temperature characteristic / threshold voltage / PTAT generator
Paper # SDM2017-41,ICD2017-29
Date of Issue 2017-07-24 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2017/7/31(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Hokkaido-Univ. Multimedia Education Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications
Chair Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.)
Vice Chair Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK)
Secretary Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) temperature characteristic
Keyword(3) threshold voltage
Keyword(4) PTAT generator
1st Author's Name Takuya Yamaguchi
1st Author's Affiliation Meiji University(Meiji Univ.)
2nd Author's Name Tatsuya Oku
2nd Author's Affiliation Meiji University(Meiji Univ.)
3rd Author's Name Kawori Sekine
3rd Author's Affiliation Meiji University(Meiji Univ.)
Date 2017-08-01
Paper # SDM2017-41,ICD2017-29
Volume (vol) vol.117
Number (no) SDM-166,ICD-167
Page pp.pp.77-82(SDM), pp.77-82(ICD),
#Pages 6
Date of Issue 2017-07-24 (SDM, ICD)