| Presentation | 2017-08-01 Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage and propose an equivalent MOSFET circuit where temperature dependence of threshold voltage is reduced. Proposal circuit consists of PTAT voltage generator circuits and level-shift circuits to reduce temperature dependence of threshold voltage. The proposed circuit was fabricated with 0.18μm n-well CMOS process and measured. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / temperature characteristic / threshold voltage / PTAT generator |
| Paper # | SDM2017-41,ICD2017-29 |
| Date of Issue | 2017-07-24 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2017/7/31(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Chair | Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | temperature characteristic |
| Keyword(3) | threshold voltage |
| Keyword(4) | PTAT generator |
| 1st Author's Name | Takuya Yamaguchi |
| 1st Author's Affiliation | Meiji University(Meiji Univ.) |
| 2nd Author's Name | Tatsuya Oku |
| 2nd Author's Affiliation | Meiji University(Meiji Univ.) |
| 3rd Author's Name | Kawori Sekine |
| 3rd Author's Affiliation | Meiji University(Meiji Univ.) |
| Date | 2017-08-01 |
| Paper # | SDM2017-41,ICD2017-29 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-166,ICD-167 |
| Page | pp.pp.77-82(SDM), pp.77-82(ICD), |
| #Pages | 6 |
| Date of Issue | 2017-07-24 (SDM, ICD) |