| Presentation | 2017-08-02 Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh, Koichiro Ishibashi, Yasuo Arai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was shown for the first time. It shows the low leakage current. We found that the Excellent On-characteristics with an input voltage sufficiently lower than conventional diode. We showed that it is possible to optimize GCD by reviewing gate length and gate width of PN-Body Tied SOI FET`s whose threshold is controlled to around 0V. A rectenna by using high impedance antenna, the possibility of shown input power of micro watt below could be rectified. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Subthreshold Slope / SOI MOSFET / RF Energy Harvesting / GCD |
| Paper # | SDM2017-45,ICD2017-33 |
| Date of Issue | 2017-07-24 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2017/7/31(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Chair | Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting |
| Sub Title (in English) | |
| Keyword(1) | Subthreshold Slope |
| Keyword(2) | SOI MOSFET |
| Keyword(3) | RF Energy Harvesting |
| Keyword(4) | GCD |
| 1st Author's Name | Shun Momose |
| 1st Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 3rd Author's Name | Takayuki Mori |
| 3rd Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 4th Author's Name | Takahiro Yoshida |
| 4th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 5th Author's Name | Junpei Iwata |
| 5th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 6th Author's Name | Takashi Horii |
| 6th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 7th Author's Name | Takahiro Furuta |
| 7th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 8th Author's Name | Takuya Yamada |
| 8th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 9th Author's Name | Daichi Takamatsu |
| 9th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 10th Author's Name | Kenji Itoh |
| 10th Author's Affiliation | Kanazawa institute of Technology(KIT) |
| 11th Author's Name | Koichiro Ishibashi |
| 11th Author's Affiliation | The University of Electro-Communications(UEC) |
| 12th Author's Name | Yasuo Arai |
| 12th Author's Affiliation | High Energy Accelerator Research Organization(KEK) |
| Date | 2017-08-02 |
| Paper # | SDM2017-45,ICD2017-33 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-166,ICD-167 |
| Page | pp.pp.109-114(SDM), pp.109-114(ICD), |
| #Pages | 6 |
| Date of Issue | 2017-07-24 (SDM, ICD) |