| Presentation | 2017-09-01 Temperature dependance of threshold current of membrane DFB/DR lasers using Bragg wavelength detuning Daisuke Inoue, Kai Fukuda, Takuo Hiratani, Takahiro Tomiyasu, Tatsuya Uryu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The performance of integrated circuits has proceeded to higher integration density and speed based on scaling law in MOSFETs. However, heat generation and signal delay in the electrical wiring layer became problems that limits the performance. To solve these problems, an on-chip optical interconnection technology was proposed. For this purpose, an ultra-low power consumption laser is required as compared with optical devices deployed in fiber communication systems. We have proposed membrane DFB / DR lasers which consist of a thin semiconductor core layer sandwiched between dielectric cladding layers. In previous works, low threshold current, high output efficiency, and high-speed operation characteristics under a room-temperature continuous-wave condition have been reported. In this paper, the Bragg wavelength detuning design was introduced to the membrane DFB / DR lasers in order to improve lasing characteristics at relatively high temperature range. From the spectrum characteristics, the detuning amount was estimated to be 53 nm for the DFB laser and 45 nm for the DR laser. As the results, more or less temperature insensitive threshold characteristic (20 ° C |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor laser / membrane laser / distributed-feedback laser / distributed-reflector laser |
| Paper # | R2017-34,EMD2017-28,CPM2017-49,OPE2017-58,LQE2017-31 |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | R / EMD / CPM / LQE / OPE |
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| Conference Date | 2017/8/31(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT-AT) / Fumihiko Hirose(Yamagata Univ.) / Tsuyoshi Yamamoto(Fujitsu Labs.) / Kazutoshi Kato(Kyushu Univ.) |
| Vice Chair | Akira Asato(Fujitsu) / / Mayumi Takeyama(Kitami Inst. of Tech.) / Kiichi Hamamoto(Kyusyu Univ.) / Kouki Sato(Furukawa Electric Industries) |
| Secretary | Akira Asato(Hosei Univ.) / (RTRI) / Mayumi Takeyama(Tohoku Gakuin Univ.) / Kiichi Hamamoto(Muroran Inst. of Tech.) / Kouki Sato(Nihon Univ.) |
| Assistant | Shinji Inoue(Kansai Univ.) / Hiroyuki Okamura(Hiroshima Univ.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Akage(NTT) / Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) / Takuo Tanemura(Univ. of Tokyo) |
| Paper Information | |
| Registration To | Technical Committee on Reliability / Technical Committee on Electromechanical Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics / Technical Committee on OptoElectronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature dependance of threshold current of membrane DFB/DR lasers using Bragg wavelength detuning |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | membrane laser |
| Keyword(3) | distributed-feedback laser |
| Keyword(4) | distributed-reflector laser |
| 1st Author's Name | Daisuke Inoue |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 2nd Author's Name | Kai Fukuda |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 3rd Author's Name | Takuo Hiratani |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 4th Author's Name | Takahiro Tomiyasu |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 5th Author's Name | Tatsuya Uryu |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 6th Author's Name | Tomohiro Amemiya |
| 6th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 7th Author's Name | Nobuhiko Nishiyama |
| 7th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 8th Author's Name | Shigehisa Arai |
| 8th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| Date | 2017-09-01 |
| Paper # | R2017-34,EMD2017-28,CPM2017-49,OPE2017-58,LQE2017-31 |
| Volume (vol) | vol.117 |
| Number (no) | R-191,EMD-192,CPM-193,OPE-194,LQE-195 |
| Page | pp.pp.51-54(R), pp.51-54(EMD), pp.51-54(CPM), pp.51-54(OPE), pp.51-54(LQE), |
| #Pages | 4 |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) |