| Presentation | 2017-08-02 [Invited Talk] Capacitor-less neuron circuits using metal-insulator transition devices Takeaki Yajima, Tomonori Nishimura, Akira Toriumi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circuit which overcomes the fundamental challenges of downscaling capacitors. The Joule-heat-induced metal-insulator transition enables heat integral in analogy with charge integral in capacitors, leading to the time averaging of the input voltage pulses in the artificial neuron circuits. Thus, the phase transition materials with time averaging function, including VO2, will replace capacitors and help integrate the neuromorphic circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VO2 / Metal-insulator transition / Neuron / Joule heat |
| Paper # | SDM2017-44,ICD2017-32 |
| Date of Issue | 2017-07-24 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2017/7/31(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Chair | Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Shigetoshi Sugawa(Tohoku Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / Takayuki Hamamoto(Tokyo University of Science) / Hiroshi Ohtake(NHK) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Renesas) / Takayuki Hamamoto(Univ. of Tokyo) / Hiroshi Ohtake(Panasonic) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Capacitor-less neuron circuits using metal-insulator transition devices |
| Sub Title (in English) | |
| Keyword(1) | VO2 |
| Keyword(2) | Metal-insulator transition |
| Keyword(3) | Neuron |
| Keyword(4) | Joule heat |
| 1st Author's Name | Takeaki Yajima |
| 1st Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 2nd Author's Name | Tomonori Nishimura |
| 2nd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 3rd Author's Name | Akira Toriumi |
| 3rd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| Date | 2017-08-02 |
| Paper # | SDM2017-44,ICD2017-32 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-166,ICD-167 |
| Page | pp.pp.107-108(SDM), pp.107-108(ICD), |
| #Pages | 2 |
| Date of Issue | 2017-07-24 (SDM, ICD) |