Presentation 2017-07-21
Circuit simulation of a Hybrid DC Circuit Breaker consisted of electric contacts and Semiconductor switch
Kyotaro Nakayama, Shungo Zen, Koichi Yasuoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, a hybrid DC circuit breaker consisted of metal contacts, semiconductor devices and a varistor is intensely studied because of the large demand of DC power distribution. We are studying a hybrid DC circuit breaker for high voltage and high current operations. In the research, a simulation model of electric contacts is quite useful to evaluate the circuit parameters. this report shows the changing of contact resistance with and without current commutation by a semiconductor switch. As a result, the contact resistance in the experiment with commutation increased rapider than that without commutation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hybrid DC circuit breaker / Molten metal bridge / Arc discharge / SiC-MOSFET
Paper # EMCJ2017-25,EMD2017-13
Date of Issue 2017-07-14 (EMCJ, EMD)

Conference Information
Committee EMCJ / EMD
Conference Date 2017/7/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Discharge, EMC
Chair Osami Wada(Kyoto Univ.) / Yoshiteru Abe(NTT-AT)
Vice Chair Kensei Oh(Nagoya Inst. of Tech.)
Secretary Kensei Oh(AIST) / (Mitsubishi Electric)
Assistant Shinichiro Yamamoto(Univ. of Hyogo) / Chie Sasaki(Panasonic) / Shinobu Nagasawa(Mitsubishi Electric) / Yoshiki Kayano(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Electromagnetic Compatibility / Technical Committee on Electromechanical Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Circuit simulation of a Hybrid DC Circuit Breaker consisted of electric contacts and Semiconductor switch
Sub Title (in English)
Keyword(1) Hybrid DC circuit breaker
Keyword(2) Molten metal bridge
Keyword(3) Arc discharge
Keyword(4) SiC-MOSFET
1st Author's Name Kyotaro Nakayama
1st Author's Affiliation Tokyo Institute of Technology(Tokyo Inst. of Tech.)
2nd Author's Name Shungo Zen
2nd Author's Affiliation Tokyo Institute of Technology(Tokyo Inst. of Tech.)
3rd Author's Name Koichi Yasuoka
3rd Author's Affiliation Tokyo Institute of Technology(Tokyo Inst. of Tech.)
Date 2017-07-21
Paper # EMCJ2017-25,EMD2017-13
Volume (vol) vol.117
Number (no) EMCJ-146,EMD-147
Page pp.pp.1-6(EMCJ), pp.1-6(EMD),
#Pages 6
Date of Issue 2017-07-14 (EMCJ, EMD)