Presentation 2017-06-20
Characterization of defects in Ge1-xSnx gate stack structure
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2017-29
Date of Issue 2017-06-13 (SDM)

Conference Information
Committee SDM
Conference Date 2017/6/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Campus Innovation Center Tokyo
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices and Memories
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of defects in Ge1-xSnx gate stack structure
Sub Title (in English)
Keyword(1)
Keyword(2)
Keyword(3)
Keyword(4)
1st Author's Name Yuichi Kaneda
1st Author's Affiliation Nagoya University(Nagoya Univ.)
2nd Author's Name Shinnichi ike
2nd Author's Affiliation Nagoya University(Nagoya Univ.)
3rd Author's Name Masayuki Kanematsu
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Mitsuo Sakashita
4th Author's Affiliation Nagoya University(Nagoya Univ.)
5th Author's Name Wakana Takeuchi
5th Author's Affiliation Nagoya University(Nagoya Univ.)
6th Author's Name Osamu Nakatsuka
6th Author's Affiliation Nagoya University(Nagoya Univ.)
7th Author's Name Shigeaki Zaima
7th Author's Affiliation Nagoya University(Nagoya Univ.)
Date 2017-06-20
Paper # SDM2017-29
Volume (vol) vol.117
Number (no) SDM-101
Page pp.pp.39-42(SDM),
#Pages 4
Date of Issue 2017-06-13 (SDM)