| Presentation | 2017-06-20 Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate Rumi Takayama, Takuya Hoshii, Akira Nakajima, Shinichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2017-27 |
| Date of Issue | 2017-06-13 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Rumi Takayama |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 2nd Author's Name | Takuya Hoshii |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 3rd Author's Name | Akira Nakajima |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Shinichi Nishizawa |
| 4th Author's Affiliation | Kyushu University(Kyushu Univ.) |
| 5th Author's Name | Hiromichi Ohashi |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 6th Author's Name | Kuniyuki Kakushima |
| 6th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 7th Author's Name | Hitoshi Wakabayashi |
| 7th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 8th Author's Name | Kazuo Tsutsui |
| 8th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| Date | 2017-06-20 |
| Paper # | SDM2017-27 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-101 |
| Page | pp.pp.31-34(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-06-13 (SDM) |