| Presentation | 2017-06-20 Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2017-28 |
| Date of Issue | 2017-06-13 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2017/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Takamasa Kawanago |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 2nd Author's Name | Ryo Ikoma |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 3rd Author's Name | Hiroyuki Takagi |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| 4th Author's Name | Shunri Oda |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Inst. of Tech.) |
| Date | 2017-06-20 |
| Paper # | SDM2017-28 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-101 |
| Page | pp.pp.35-38(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-06-13 (SDM) |