| Presentation | 2017-06-20 [Invited Lecture] Scintillators and Ga2O3 Semiconductors Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With the recent advancement of radiation-detection technologies, the demands of higher performances of scintillators are considerably increasing. Scintillators are a class of phosphors which shows luminescence upon incident of ionizing radiations; therefore, one can use scintillators for radiation detections with a use of photodetectors together. Fundamental properties of scintillators include high light yield and short decay time. As represented in NaI:Tl and YAG:Ce as used in practice, scintillator materials in general consist of inorganic insulator as a host matrix and transitional metals or rare-earth ions as luminescent centre. Therefore, the luminescent properties strongly depends on the radiative electronic transitions of dopants and the ones showing the shortest lifetime are on the order of several tens nanoseconds. In contrast, some semiconductors show potentially higher scintillation light yield and even shorter lifetimes. For the latter reasons, semiconductor materials are of our great interest for scintillator applications, and scintillation properties of Ga2O3 in addition to general aspects of scintillators are discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Scintillator / Semiconductor / Ga2O3 |
| Paper # | SDM2017-21 |
| Date of Issue | 2017-06-13 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2017/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Scintillators and Ga2O3 Semiconductors |
| Sub Title (in English) | |
| Keyword(1) | Scintillator |
| Keyword(2) | Semiconductor |
| Keyword(3) | Ga2O3 |
| 1st Author's Name | Go Okada |
| 1st Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 2nd Author's Name | Yuki Usui |
| 2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 3rd Author's Name | Naoki Kawano |
| 3rd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 4th Author's Name | Noriaki Kawaguchi |
| 4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 5th Author's Name | Takayuki Yanagida |
| 5th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| Date | 2017-06-20 |
| Paper # | SDM2017-21 |
| Volume (vol) | vol.117 |
| Number (no) | SDM-101 |
| Page | pp.pp.1-4(SDM), |
| #Pages | 4 |
| Date of Issue | 2017-06-13 (SDM) |