Presentation 2017-06-20
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2017-25
Date of Issue 2017-06-13 (SDM)

Conference Information
Committee SDM
Conference Date 2017/6/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Campus Innovation Center Tokyo
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices and Memories
Chair Tatsuya Kunikiyo(Renesas)
Vice Chair Takahiro Shinada(Tohoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.)
Assistant Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Sub Title (in English)
Keyword(1)
1st Author's Name Nobuyuki Fujimura
1st Author's Affiliation Nagoya University(Nagoya Univ.)
2nd Author's Name Akio Ohta
2nd Author's Affiliation Nagoya University(Nagoya Univ.)
3rd Author's Name Mitsuhisa Ikeda
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Katsunori Makihara
4th Author's Affiliation Nagoya University(Nagoya Univ.)
5th Author's Name Seiichi Miyazaki
5th Author's Affiliation Nagoya University(Nagoya Univ.)
Date 2017-06-20
Paper # SDM2017-25
Volume (vol) vol.117
Number (no) SDM-101
Page pp.pp.19-23(SDM),
#Pages 5
Date of Issue 2017-06-13 (SDM)