Presentation | 2017-06-20 Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | SDM2017-25 |
Date of Issue | 2017-06-13 (SDM) |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 2017/6/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Campus Innovation Center Tokyo |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
Chair | Tatsuya Kunikiyo(Renesas) |
Vice Chair | Takahiro Shinada(Tohoku Univ.) |
Secretary | Takahiro Shinada(Tohoku Univ.) |
Assistant | Hiroya Ikeda(Shizuoka Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Nobuyuki Fujimura |
1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
2nd Author's Name | Akio Ohta |
2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
3rd Author's Name | Mitsuhisa Ikeda |
3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
4th Author's Name | Katsunori Makihara |
4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
5th Author's Name | Seiichi Miyazaki |
5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
Date | 2017-06-20 |
Paper # | SDM2017-25 |
Volume (vol) | vol.117 |
Number (no) | SDM-101 |
Page | pp.pp.19-23(SDM), |
#Pages | 5 |
Date of Issue | 2017-06-13 (SDM) |